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BFP640
NPN Silicon Germanium RF Transistor * High gain low noise RF transistor * Provides outstanding performance for a wide range of wireless applications * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz * High maximum stable gain Gms = 24 dB at 1.8 GHz * Gold metallization for extra high reliability * 70 GHz fT -Silicon Germanium technology ESD: Electrostatic discharge sensitive device, observe handling precaution!
3 4
2 1
VPS05605
Type BFP640
Maximum Ratings Parameter
Marking R4s 1=B
Pin Configuration 2=E 3=C 4=E
Symbol VCEO 4 3.7 VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 50 3 200 150
Package SOT343
Value Unit V
-
Collector-emitter voltage TA > 0 C TA 0 C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 90C Junction temperature Ambient temperature Storage temperature
mA mW C
-65 ... 150 -65 ... 150
1T is measured on the collector lead at the soldering point to the pcb S
1
Apr-21-2004
BFP640
Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 300 Unit K/W
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, pulse measured
1For calculation of R thJA please refer to Application Note Thermal Resistance
Unit max. 30 100 3 270 V A nA A -
typ. 4.5 180
V(BR)CEO ICES ICBO IEBO hFE
4 110
2
Apr-21-2004
BFP640
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 30 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz
1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
30 -
40 0.09 0.23 0.5
0.2 -
GHz pF
Ccb Cce Ceb F
dB 0.65 1.3 24 dB
G ms
-
G ma
-
12.5
-
dB
|S21e|2 IP 3 21 10.5 26.5 -
dB
dBm
P-1dB
-
13
-
3
Apr-21-2004
BFP640
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 2 -0.0065 fA V V fF ps A V ns -
-
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2
450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5
A mA V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298
fA fA mA V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
RCBS
CBCC C B F P 6 4 0 _ C h ip S B E RCES
LCC
B
LBB
LBC
CBEC
RCCS
LCB
C
LEC
CBEI LEB CBEO T= 2 5 C CCEO
CCEI
Itf = 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES =
120 120 20 696.2 682.4 230.6 98.4 55.9 180 79 75 131.2 102.5 112.6 180.4 1200 1200 300
pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF
Valid up to 6GHz
4
Apr-21-2004
BFP640
Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p)
220
mW
10 3
180 160 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150
K/W
RthJS
10 2
Ptot
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1 -7 10 10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load Ptotmax/P totDC = (tp)
10 1
Collector-base capacitance Ccb= (VCB) f = 1MHz
0.25
Ptotmax /PtotDC
pF
-
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
CCB
-3 -2
0.15
0.1
0.05
10 0 -7 10
10
-6
10
-5
10
-4
10
10
s
10
0
0 0
2
4
6
8
10
V
14
tp
VCB
5
Apr-21-2004
BFP640
Third order Intercept Point IP3=(IC)
(Output, ZS=ZL=50)
Transition frequency fT= (IC) f = 1GHz VCE = parameter
45
GHz
VCE = parameter, f = 1.8 GHz
30
dBm
24 21
4V
35 30
3V
IP3
18 15 12 9 6 3 0 0
mA 2V 3V
fT
25 20 15 10 5
0.5V 2V
1V
10
20
30
40
60
0 0
10
20
30
40
mA
60
IC
IC
Power gain Gma, Gms = (IC) VCE = 3V f = parameter
30
dB 0.9GHz
Power Gain Gma, Gms = (f),
|S21| = f (f)
VCE = 3V, IC = 30mA
55
dB
26 24 22 20 18 16
4GHz
45 40
G
G
35
1.8GHz
2.4GHz 3GHz
30 25 20 15 10 0
Gms
14
5GHz
|S21|
Gma
12 10 0
6GHz
10
20
30
40
mA
60
1
2
3
4
GHz
6
IC
f
6
Apr-21-2004
BFP640
Power gain Gma, Gms = (VCE) IC = 30mA f = parameter
30
0.9GHz dB 1.8GHz
2.4 2.2 2 1.8 1.6 1.4
F [dB]
Noise figure F = (I C) VCE = 3V, ZS = ZSopt
20
2.4GHz 3GHz
G
15
4GHz 5GHz 6GHz
1.2 1 0.8 0.6
f = 6GHz f = 5GHz f = 4GHz f = 3GHz
10
5
0.4 0.2
f = 2.4GHz f = 1.8GHz f = 0.9GHz
0 0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0 0 10 20
I [mA]
c
VCE
30
40
50
Noise figure F = (IC ) VCE = 3V, f = 1.8 GHz
Noise figure F = (f) VCE = 3V, ZS = Z Sopt
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
F [dB] F [dB]
Z = 50
S
1.2
1
1
0.8
Z =Z
S Sopt
0.8
IC = 30mA
0.6
0.6
IC = 5.0mA
0.4
0.4
0.2
0.2
0 0 10 20
I [mA]
c
0 30 40 50 0 1 2 3
f [GHz]
4
5
6
7
7
Apr-21-2004
BFP640
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, I C = 5 mA/ 30 mA
1 1.5 0.5 0.4 0.3 0.2
2.4GHz I = 5.0mA
c
2 3 4 5 10
0.9GHz 1 1.5 5GHz 6GHz 2 3 45
0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5
0.1
1.8GHz
3GHz 0.2 0.3 0.4 0.5 4GHz
-10 -5 -4
I = 30mA c
-3 -2 -1.5 -1
8
Apr-21-2004

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